BUK465-60H - PowerMOS transistor

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

The device is intended for use in automotive and general purpose switching applications.

NXP

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Datasheet Details

Part number	BUK465-60H
Manufacturer	NXP
File Size	74.19 KB
Description	PowerMOS transistor
Datasheet	BUK465-60H Datasheet
Additional preview pages of the BUK465-60H datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor BUK465-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX.

Published: Mar 23, 2005 |