BUK481-60A Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 60 1.6 1.5 150 0.35 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION SYMBOL d g 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C MIN. -55 MAX. 60 60 30 1.6 1 6.4 1.5 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER From junction to solder point From junction to ambient CONDITIONS Mounted on any PCB . Mounted on PCB of Fig.18 MIN. - TYP. 14 - MAX. 17 85 UNIT K/W K/W 1 Temperature measured at solder joint on drain tab. November 1995 Rev 1.100 Philips Semiconductors Product specification Power MOS transistor STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 m A VDS = VGS; ID = 0.1 m A VDS = 60 V; VGS = 0 V; VDS = 60 V; VGS = 0 V; Tj = 125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 1.6 A MIN. 60 2.1 TYP. 3.0 1 0.1 10 0.22 MAX. 4.0 10 1.0 100 0.35 UNIT V V µA m A n A Ω DYNAMIC...