BUK482-200A - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance.

NXP Semiconductors

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BUK482-200A powermos transistor by NXP - Datasheet Preview

Datasheet Details

Part number	BUK482-200A
Manufacturer	NXP Semiconductors
File Size	52.65 KB
Description	PowerMOS transistor
Datasheet	BUK482-200A Datasheet

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Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Switched Mode Power Supplies (SMPS) and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 200 2.0 8.3 0.

Published: Mar 23, 2005 |