BUK482-200A Datasheet | NXP Semiconductors

DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Switched Mode Power Supplies (SMPS) and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. 200 2.0 8.3 0.9 UNIT V A W Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION SYMBOL d g 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDS VDGR ±VGS ID IDM IDR IDRM Ptot Tstg Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tsp = 25 ˚C Tsp = 100 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C Tsp = 25 ˚C MIN. -55 MAX. 200 200 30 2.0 1.3 8.0 2.0 8.0 8.3 150 150 UNIT V V V A A A A A W ˚C ˚C AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. UNIT Drain-source non-repetitive ID = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off RGS = 50 Ω energy Tj = 25˚C prior to surge Tj = 100˚C prior to surge - 50 8 m J m J January 1998 Rev 1.000 Philips Semiconductors Product specification Power MOS transistor THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint pcb mounted; pad area as in fig:17 TYP. 156 70 MAX. 15 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) VSD PARAMETER Drain-source breakdown...