BUK7626-100B Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) Trench MOS™ technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 pliant s Standard level patible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V and 42 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 144 m J s ID ≤ 49 A s RDSon = 22 mΩ (typ) s Ptot ≤ 157 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) MBK106 Simplified outline mb Symbol [1] mb d g s MBB076 1 2 3 MBK116 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. Philips Semiconductors BUK75/7626-100B Trench MOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 49 A; VDS ≤ 100 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min - 55 - 55 Max 100 100 ±20 49 34 197 157 +175 +175 49 197 144 Unit V V V A A A W °C °C A A m J Source-drain diode Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 9397 750 11238 © Koninklijke Philips Electronics N.V. 2003. All rights...