BUK7626-100B Datasheet | Nexperia

description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V, 24 V and 42 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Ptot Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ Max Unit - - 100 V - - 49 A - - 157 W - 22 26 mΩ Nexperia N-channel Trench MOS standard level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive ID = 49 A; Vsup ≤ 100 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 80 V; Tj = 25 °C; see Figure 13 Min Typ Max...