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BUK7909-75AIE - N-channel TrenchPLUS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection.

Features

  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Reduced component count due to integrated current sensor.
  • Suitable for standard level gate drive sources 1.3.

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Datasheet preview – BUK7909-75AIE

Datasheet Details

Part number BUK7909-75AIE
Manufacturer NXP
File Size 208.36 KB
Description N-channel TrenchPLUS standard level FET
Datasheet download datasheet BUK7909-75AIE Datasheet
Additional preview pages of the BUK7909-75AIE datasheet.

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Full PDF Text Transcription

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BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Reduced component count due to integrated current sensor „ Suitable for standard level gate drive sources 1.
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