BUK7909-75AIE Overview
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK7909-75AIE Key Features
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
- Q101 pliant
- Reduced ponent count due to integrated current sensor
- Suitable for standard level gate drive sources