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BUK7909-75ATE - N-channel TrenchPLUS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing.

Features

  • Allows responsive temperature monitoring due to integrated temperature sensor.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources 1.3.

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Datasheet preview – BUK7909-75ATE

Datasheet Details

Part number BUK7909-75ATE
Manufacturer NXP
File Size 217.32 KB
Description N-channel TrenchPLUS standard level FET
Datasheet download datasheet BUK7909-75ATE Datasheet
Additional preview pages of the BUK7909-75ATE datasheet.

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Full PDF Text Transcription

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BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Allows responsive temperature monitoring due to integrated temperature sensor „ Electrostatically robust due to integrated protection diodes „ Low conduction losses due to low on-state resistance „ Q101 compliant „ Suitable for standard level gate drive sources 1.
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