BUK9508-55B Datasheet | NXP Semiconductors

N-channel Trench MOS logic level FET Rev. 03 - 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant 1.3 Applications - 12 V and 24 V loads - Automotive systems 1.4 Quick reference data Table 1. VDS ID Symbol Parameter ww re .nu at an e ce. 8 Tr ia Quick reference data drain-source voltage Conditions Min Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation VGS =5V ; Tmb =2 5° C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 [1] - Suitable for logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating - General purpose power switching - Motors, lamps and solenoids l Typ -6 .2 7.1 Max Unit 55 75 203 V A W PD F w C Ptot Static characteristics RDSon drain-source on-state resistance VGS =1 0V ; ID =2 5A ; Tj =2 5° C VGS =5V ; ID =2 5A ; Tj =2 5° C; see Figure 11; see Figure 12 7 8.4 mΩ mΩ http://.. NXP Semiconductors N-channel Trench MOS logic level FET Quick reference data …continued Parameter Conditions Min --3 Typ Max Unit 52 m...