BUK9508-55B Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
BUK9508-55B Key Features
- Low conduction losses due to low on-state resistance
- Q101 pliant
BUK9508-55B Applications
- Low conduction losses due to low on-state resistance