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BUK9508-55A - transistor Logic level FET

General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Key Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

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Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9508-55A BUK9608-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V V GS = 10 V MAX. 55 75 200 175 8 7.3 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT404 PIN 1 2 3 DESCRIPTION gate drain source ww re .nu at an e ce.