BUK952R8-30B Datasheet | NXP Semiconductors

description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Low conduction losses due to low on-state resistance - Suitable for logic level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 5 V; Tmb = 25 °C; see Figure 3; see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 Min Typ Max Unit - - 30 V [1] - - 75 A - - 300 W - 2 2.4 mΩ - 2.4 2.8 mΩ NXP Semiconductors N-channel Trench MOS logic level FET Table 1. Quick reference data …continued Symbol Parameter Conditions Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics...