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BUK9675-100A - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

Features

  • very low on-state resistance. It is intended for use in automotive and general purpose switching.

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Datasheet Details

Part number BUK9675-100A
Manufacturer NXP
File Size 82.74 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet BUK9675-100A Datasheet
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Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9575-100A BUK9675-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX.
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