BUK9675-100A
BUK9675-100A is N-channel MOSFET manufactured by Nexperia.
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
- AEC Q101 pliant
- Low conduction losses due to low on-state resistance
3. Applications
- Automotive and general purpose power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 100 V
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
- - 23 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1
- - 98 W
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 25 °C; resistance
Fig. 12
- 55 72 mΩ
VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 12
- 60 75 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive drain- ID = 23 A; Vsup ≤ 100 V; RGS = 50 Ω; [1][2]
- - 100 m J source avalanche
VGS = 5 V; Tj(init) = 25 °C; unclamped; energy
Fig. 4
[1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information.
Nexperia
N-channel Trench MOS logic level FET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 G gate mb
2 D drain
3 S source mb D mounting base; connected to...
