• Part: BUK9840-55
  • Description: N-channel TrenchMOS logic level FET
  • Manufacturer: NXP Semiconductors
  • Size: 132.04 KB
Download BUK9840-55 Datasheet PDF
NXP Semiconductors
BUK9840-55
BUK9840-55 is N-channel TrenchMOS logic level FET manufactured by NXP Semiconductors.
description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - AEC Q101 pliant - Electrostatically robust due to integrated protection diodes - Low conduction losses due to low on-state resistance 1.3 Applications - Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 150 °C Tsp = 25 °C Tamb = 25 °C VGS = 5 V; ID = 5 A; Tj = 25 °C ID = 3.6 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 55 V - - 10.7 A - - 1.8 W - 30 40 mΩ - - 60 m J NXP Semiconductors N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G...