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BUK9840-55 - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

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BUK9840-55 N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.029 at VGS = 10 V 60 0.033 at VGS = 4.5 V ID (A) 7.0 5.6 SOT-223 D S D G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 7.0 6.0 6.1 5.0 A IDM 40 Avalanche Current IAS 15 Single Pulse Avalanche Energy Maximum Power Dissipationa EAS 11 mJ TA = 25 °C TA = 70 °C PD 3.3 1.7 2.