BUT11AX
BUT11AX is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 150 MAX. 1000 450 5 10 32 1.5 UNIT V V A A W V A ns
Ths ≤ 25 ˚C
PINNING
- SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION case
SYMBOL c b
1 2 3 case isolated e
LIMITING VALUES
Limiting values in accordance with the...
