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BUT12 - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package.

Converters Inverters Switching regulators

Motor control systems.

Key Features

  • mages resulting from such improper use or sale. 1997 Aug 13 10 Philips Semiconductors.
  • a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P. O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volod.

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Other Datasheets by NXP Semiconductors

Part Number Description
BUT12A Silicon diffused power transistors
BUT12AF Silicon diffused power transistors
BUT12AI Silicon Diffused Power Transistor
BUT12F Silicon diffused power transistors
BUT12XI Silicon Diffused Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage 2 1 MBB008 3 MBK106 1 2 3 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbol.