BUT12 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. handbook, halfpage 2 1 MBB008 MBK106 1 2 3 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VCEsat ICsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 3 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.2 resistive load; see Figs 12 and 13 6 5 8 20 125 0.8 A A A A W µs see Fig.8 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the...