BUT12 - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

Wing Shing Computer Components

General Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

Datasheet Details

Part number	BUT12
Manufacturer	Wing Shing Computer Components
File Size	65.95 KB
Description	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Datasheet	BUT12 Datasheet

📁 Similar Datasheet

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Other Datasheets by Wing Shing Computer Components

Part Number	Description
BUT12A	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT12AF	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT11	NPN SILICON TRANSISTOR
BUT11AF	SILICON DIFFUSED POWER TRANSISTOR
BUT56A	NPN EPITAXIAL SILICON TRANSISTOR

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BUT12 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V MIN Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V MAX 850 400 8 20 100 1.5 1.