BUT12 Datasheet | Wing Shing Computer Components

GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0V Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V MAX 850 400 8 20 100 1.5 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 -55 MAX 850 400 5 8 4 8 100 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat h FE VF f T Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100m A L = 25m H IC = 6.0A; IB = 1.2A IC = 6.0A; IB = 1.2A IC = 1.0A; VCE = 5V IC = 0.1A; VCE = 10V VCB = 10V IC=6A,IB1=-IB2=1.2A,VCC=150V IC=6A,IB1=-IB2=1.2A,VCC=150V MAX 1.0 2.0 UNIT m A m A...