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BUT12AI Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI.

General Description

Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Inductive fall time CONDITIONS VBE = 0 V TYP.

5 MAX.

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