BUT12A - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

Wing Shing Computer Components

General Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

Datasheet Details

Part number	BUT12A
Manufacturer	Wing Shing Computer Components
File Size	66.00 KB
Description	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Datasheet	BUT12A Datasheet

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Other Datasheets by Wing Shing Computer Components

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BUT12AF	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
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BUT12A GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 6.0A; IB = 1.2A f = 16KHz IC=6A,IB1=-IB2=1.2A,VCC=150V 1.