BUT12A Overview
SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector...
