| Part Number | BUT12A Datasheet |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| Overview | SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS. 0V MIN Tmb 25 -55 MAX 1000 450 5 8 4 8 100 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satu. |
BUT12A Datasheet and Specifications PDF
The BUT12A is a SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION).
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| Part Number | BUT12A Datasheet |
|---|---|
| Description | Silicon diffused power transistors |
| Manufacturer | NXP Semiconductors |
| Overview | High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control sy. C; see Fig.2 resistive load; see Figs 12 and 13 6 5 8 20 125 0.8 A A A A W µs see Fig.8 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base . |