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BUT12F - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package.

Converters Inverters Switching regulators

Motor control systems.

Key Features

  • are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. handbook, halfpage BUT12F; BUT12AF PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated from all pins DESCRIPTION handbook, halfpage 2 1 MBB008 3 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol.