BUT12F Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUT12F; BUT12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. handbook, halfpage BUT12F; BUT12AF PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated from all pins DESCRIPTION handbook, halfpage 2 1 MBB008 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT12F BUT12AF VCEO collector-emitter voltage BUT12F BUT12AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUT12F BUT12AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 4 see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 6 5 8 20 23 0.8 A A A A W µs see Figs 7 and 9 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the...