SavantIC BUT12AF
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220Fa package●High voltage ,high speed
APPLICATIONS
●Converters●Inverters
●Switching regulators
●Motor control systems PINNING PIN 1 2 3 Base Collector Emitter
DESCRIPTION
BUT12F BUT12AF Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUT12F BUT12AF BUT12F BUT12AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 8 20 4 6 TC=25 23 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM Ptot Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE 55 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT12F IC=0.1A; IB=0;L=25mH BUT12AF BUT12F BUT12AF BUT12F BUT12AF BUT12F BUT12AF IC=6A; IB=1.2A CONDITIONS BUT12F BUT12AF SYMBOL MIN 400 TYP.