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BUT11AI - Silicon Diffused Power Transistor

General Description

Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector Saturation current Inductive fall time CONDITIONS VBE = 0 V TYP. 2.5 0.08 MAX. 1000 450 5 10 100 1.5 0.15 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 2.5 A; IB = 0.33 A ICon = 2.