BUT11F
BUT11F is Silicon Diffused Power Transistor manufactured by NXP Semiconductors.
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. MAX. 850 400 5 10 20 1.5 3 800 UNIT V V A A W V A ns
Ths ≤ 25 ˚C
[INCLUDE] LIMITING VALUES
Limiting values in accordance with the...
