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BUT11APX-1200 - Silicon Diffused Power Transistor

General Description

Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.

Key Features

  • exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.