NXP Semiconductors BUT11AF
Silicon Diffused Power Transistor
| Part No. | BUT11AF |
|---|---|
| Datasheet | BUT11AF Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon Diffused Power Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 800 MAX. 1000 450 5 10 20 1.5 UNIT V V A A W V A ns Ths ≤ 25 ˚C [INCLUDE] LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX.
