Datasheet Summary
DATA SHEET .onsemi.
NPN Silicon Transistor BUT11AF
High Voltage Power Switching Applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO Collector- Base Voltage
VCEO Collector- Emitter Voltage
VEBO Emitter- Base Voltage
Collector Current (DC)
- Collector Current (Pulse)
Base Current (DC)
- Base Current (Pulse)
Collector Dissipation (TC = 25°C)
Junction Temperature
°C
TSTG Storage Temperature
- 65~150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality...
