BUT11AF - NPN Silicon Transistor

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Datasheet Details

Part number	BUT11AF
Manufacturer	ON Semiconductor
File Size	128.21 KB
Description	NPN Silicon Transistor
Datasheet	BUT11AF Datasheet
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DATA SHEET www.onsemi.com NPN Silicon Transistor BUT11AF High Voltage Power Switching Applications MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO Collector−Base Voltage 1000 V VCEO Collector−Emitter Voltage 450 V VEBO Emitter−Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC = 25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature −65~150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Published: Jan 22, 2016 |