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BUT11AF - SILICON DIFFUSED POWER TRANSISTOR

General Description

Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.

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Datasheet Details

Part number BUT11AF
Manufacturer Wing Shing Computer Components
File Size 70.95 KB
Description SILICON DIFFUSED POWER TRANSISTOR
Datasheet download datasheet BUT11AF Datasheet

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BUT11AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V 1.