Datasheet Details
| Part number | BUT11AF |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 70.95 KB |
| Description | SILICON DIFFUSED POWER TRANSISTOR |
| Datasheet | BUT11AF_WingShingComputerComponents.pdf |
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Overview: BUT11AF GENERAL.
| Part number | BUT11AF |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 70.95 KB |
| Description | SILICON DIFFUSED POWER TRANSISTOR |
| Datasheet | BUT11AF_WingShingComputerComponents.pdf |
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SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 2.5A;
IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V 1.0 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN Tmb 25 -55 MAX 1000 450 5 5 2 4 40 150 150 UNIT V V V A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector-emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUT11AF | High Voltage NPN Power Transistor | Motorola Inc |
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BUT11AF | Silicon Diffused Power Transistor | NXP |
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BUT11AF | SILICON POWER TRANSISTOR | SavantIC |
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BUT11AF | NPN Silicon Transistor | ON Semiconductor |
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BUT11AF | NPN Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| BUT11 | NPN SILICON TRANSISTOR |
| BUT12 | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| BUT12A | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| BUT12AF | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| BUT56A | NPN EPITAXIAL SILICON TRANSISTOR |