| Part Number | BUT11AF Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTI. stors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT11F IC=0.1A; IB=0 BUT11AF BUT11F BUT11AF BUT11F BUT11AF BUT11F BUT11AF IC=3A; IB=0.6A CONDITIONS BUT11F BUT11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat . |
BUT11AF Datasheet and Specifications PDF
The BUT11AF is a SILICON POWER TRANSISTOR.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 15.87 mm |
| Length | 10.16 mm |
| Width | 4.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BUT11AF Datasheet |
|---|---|
| Description | NPN Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Par. 1AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω Mi. |
| Part Number | BUT11AF Datasheet |
|---|---|
| Description | High Voltage NPN Power Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUT11AF/D
Full Pak High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated.
Pulsed (1) Base Current * Continuous Base Current * Pulsed (1) Total Power Dissipation @ TC = 25°C* Derated above 25°C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VEBO VISOL1 VISOL2 VISOL3 IC ICM IB IBM PD TJ, Tstg Value 450 1000 9.0 4500 3500 2500 5.0 10 2.0 4.0 40 0.32 * 65 to +. |
| Part Number | BUT11AF Datasheet |
|---|---|
| Description | Silicon Diffused Power Transistor |
| Manufacturer | NXP Semiconductors |
| Overview | High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor con. current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 5 10 2 4 20 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heats. |