| Part Number | BUT11AI Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulato. imum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Jun. |
BUT11AI Datasheet and Specifications PDF
The BUT11AI is a Silicon Diffused Power Transistor.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 150 °C |
| Part Number | BUT11AI Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control system. EO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.33A 1.5 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.33A VCE=RatedVCES ;VBE= 0 VCE=Rated. |