BUT11AI is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BUT11AI | Silicon Diffused Power Transistor |
STMicroelectronics |
BUT11A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
NXP Semiconductors |
BUT11A | Silicon diffused power transistors |
SavantIC |
BUT11A | SILICON POWER TRANSISTOR |
Nell Power Semiconductor |
BUT11A | High Voltage Fast-switching NPN Power Transistor |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUT11AI TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;.
