BUW85 Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems - Switching applications. ok, halfpage BUW84; BUW85 PINNING PIN 1 2 3 base collector; connected to mounting base emitter DESCRIPTION 2 1 3 MBB008 MBK107 Fig.1 Simplified outline (SOT82) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW84 BUW85 VCEO collector-emitter voltage BUW84 BUW85 VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time IC = 1 A; IB = 200 m A; see Fig.7 see Figs 4 and 5 see Figs 4 and 5 Tmb ≤ 25 °C; see Fig.8 resistive load; see Fig.11 open base - - - - - - 0.4 400 450 1 2 3 50 - V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 - - 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistance from junction to mounting base thermal resistance from junction to ambient in free air VALUE 2.1 100 UNIT K/W K/W 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUW84 BUW85 VCEO collector-emitter voltage BUW84 BUW85 VEBO IC ICM IB IBM IBM Ptot Tstg Tj emitter-base voltage collector current (DC) collector current (peak value) base current (DC) base current (peak value) base current (reversed; peak value) turn-off current total power dissipation storage temperature junction temperature Tmb ≤ 25 °C; see Fig.8 open collector see Figs 4 and 5 tp = 2 ms; see Figs 4 and 5 open base - - - - - - - - - - 65 - PARAMETER collector-emitter peak voltage VBE = 0 - - CONDITIONS BUW84; BUW85 MIN. MAX. 800 1000 400 450 5 2 3 0.75 1 - 1 50 +150 150 V V V V V A A A A A...