BY249-600 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - High thermal cycling performance - Low thermal resistance BY249 series SYMBOL QUICK REFERENCE DATA VR = 300 V / 600 V / 800 V VF ≤ 1.05 V IF(AV) = 7 A IFSM ≤ 60 A k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes. The devices are intended for low frequency power rectifier applications. The BY249 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRSM VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 RMS forward current Peak repetitive forward current Peak non-repetitive forward current. I2t for fusing Storage temperature Operating junction temperature sinusoidal; a = 1.57; Tmb ≤ 131 ˚C sinusoidal; a = 1.57; t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) t = 10 ms CONDITIONS BY249 -40 MIN. MAX.UNIT -300 300 300 200 200 -600 600 600 500 500 7 11 60 60 66 18 150 150 -800 800 800 700 700 UNIT V V V V A A A A A A2s ˚C ˚C I2t Tstg Tj 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes general purpose THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. - BY249 series TYP. 60 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A IF = 5 A; Tj = 100 ˚C VR = VRWM; Tj = 125 ˚C MIN. TYP. 1.2 0.9 0.1 MAX. 1.6 1.05 0.4 UNIT V V m A September 1998 Rev 1.300 Philips Semiconductors Product specification Rectifier...