BY278 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack - Also available with preformed leads for easy insertion. APPLICATIONS - Damper diode in high frequency horizontal deflection circuits up to 16 k Hz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol. , a MAM104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VR IFWM IFRM IFSM PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage working peak forward current repetitive peak forward current non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax Tamb = 75 °C; PCB mounting (see Fig.4); see Fig.2 CONDITIONS MIN. - - - - - - MAX. 1700 1700 1650 5 10 50 V V V A A A UNIT Tstg Tj storage temperature junction temperature - 65 - 65 +175 +150 °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr tfr PARAMETER forward voltage reverse current reverse recovery time forward recovery time CONDITIONS IF = 5 A; Tj = Tj max; see Fig.3 IF = 5 A; see Fig.3 VR = VRmax; Tj = 150 °C when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.6 when switched to IF = 5 A in 50 ns; Tj = Tj max; Fig.7 MAX. 1.4 1.5 150 1 1 V V µA µs µs UNIT 1996 Sep 26 Philips Semiconductors Product specification Damper diode THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 mounted as shown in Fig.5 Note CONDITIONS lead length = 10 mm VALUE 25 75 40 UNIT K/W K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick;...