BY559-1500 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Low forward recovery voltage - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.2 V Vfr ≤ 14 V tfr ≤ 250 ns IF(AV) = 10 A IFSM ≤ 100 A k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring fast forward recovery and low forward recovery voltage. The device is intended for use in multi-sync monitor horizontal deflection circuits with maximum scan rates from 82 k Hz to 120 k Hz. The BY559 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM IFWM IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1300 10 150 180 200 150 150 UNIT V V A A A A ˚C ˚C Tstg Tj f = 120 k Hz; t = 100 µs t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. 60 MAX. 1.0 UNIT K/W K/W September 1998 Rev 1.100 Philips Semiconductors Objective specification Rectifier diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 10 A IF = 10 A; Tj = 125 ˚C VR = VRWMmax VR = VRWMmax; Tj = 125 ˚C MIN. - BY559-1500 TYP. 1.0 0.79 - MAX. 1.25 0.9 0.5 2.0 UNIT V V m A m A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL Vfr tfr trr Qs PARAMETER Forward recovery voltage Forward recovery time...