BYC10B-600 Datasheet | NXP Semiconductors

FEATURES - Extremely fast switching - Low reverse recovery current - Low thermal resistance - Reduces switching losses in associated MOSFET SYMBOL k tab QUICK REFERENCE DATA VR = 600 V a VF ≤ 1.8 V 3 IF(AV) = 10 A trr = 19 ns (typ) APPLICATIONS - Active power factor correction - Half-bridge lighting ballasts - Half-bridge/ full-bridge switched mode power supplies. The BYC10B-600 is supplied in the SOT404 surface mounting package. PINNING PIN DESCRIPTION 1 no connection 2 cathode1 3 anode tab cathode SOT404 tab 2 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRWM VR IF(AV) IFRM IFSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward current. Storage temperature Operating junction temperature Tmb ≤ 114 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) MIN. - - - -40 - MAX. 600 600 500 10 65 71 UNIT 150 ˚C 150 ˚C THERMAL...