BYD147 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack - Smallest surface mount rectifier outline. MAM061 BYD147 hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. This package is handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 140 °C; averaged over any 20 ms period; see Figs 5 and 6 Ttp = 90 °C; averaged over any 20 ms period; see Figs 5 and 6 IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature t = 10 ms half sinewave; VR = VRRMmax CONDITIONS - - - - - - 65 - 65 MIN. MAX. 400 400 1 2 25 +175 +175 V V A A A °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 1 A; see Fig.2; Tj = 150 °C IF = 1 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A MAX. 0.88 1.05 5 150 50 V V µA µA ns UNIT 1999 Nov 11 Philips Semiconductors Product specification Ultra fast low-loss rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 30 150 UNIT K/W K/W 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General part of the associated handbook”. 1999 Nov 11 Philips Semiconductors Product specification Ultra fast...