BYD163 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is handbook, 4 columns k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 95 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 5 and 6 t = 10 ms half sinewave; VR = VRRMmax CONDITIONS - - - MIN. MAX. 600 600 1 V V A UNIT IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature - - 65 - 65 25 +175 +175 A °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 1 A; Tj = 150 °C; see Fig.2 IF = 1 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A MAX. 1.05 1.25 5 150 50 V V µA µA ns UNIT 1999 Feb 10 Philips Semiconductors Product specification Ultra fast low-loss rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General Part of associated Handbook”. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 60 120 UNIT K/W K/W 1999 Feb 10 Philips Semiconductors Product specification Ultra fast low-loss rectifier GRAPHICAL DATA handbook, halfpage 10 IF MGR650 102 handbook, halfpage (µA) 10 IR MGR653 Tj = 175 °C (A) 8 Tj = 175 °C 100 °C 25 °C 100 °C...