NXP Semiconductors BYD32
This package is handbook, k halfpage a Fig.1 Simplified outline (SOD120) and symbol.FEATURES
● Glass passivated● High maximum operating temperature
● Low leakage current
● Excellent stability
● Guaranteed avalanche energy absorption capability
● Available in ammo-pack. MGL571 BYD32 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD 120 package through Implotec™(1) technology. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD32D BYD32G BYD32J VR continuous reverse voltage BYD32D BYD32G BYD32J IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period; see Fig.2 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see Fig.3 − − − − 200 400 600 0.76 V V V A PARAMETER repetitive peak reverse voltage − − − 200 400 600 V V V CONDITIONS MIN. MAX. UNIT IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature − −65 −65 15 +175 +175 A °C °CELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.