BYD67 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Shipped in 8 mm embossed tape - Smallest surface mount rectifier package. MAM061 DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. The SOD87 is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 85 °C; see Fig.2; averaged over any 20 ms period; see also Fig.4 Tamb = 60 °C; PCB mounting (see Fig.8); see Fig.3; averaged over any 20 ms period; see also Fig.4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C Tamb = 60 °C t = 10 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax CONDITIONS - - - MIN. MAX. 300 300 1.2 V V A UNIT - 0.4 - - - 11 3.7 5.0 Tstg Tj storage temperature junction temperature - 65 - 65 +175 +175 °C °C 1999 Oct 20 Philips Semiconductors Product specification Ripple blocking diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 °C; see Fig.6 tfr ton forward recovery time turn-on time when switched to IF = 1 A in 50 ns; see Fig.9 when switched from VF = 0 to VF = 3 V; measured between 10% and 90% of IFmax; see Fig.11 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 f = 1 MHz; VR = 0; see Fig.7 MIN. - - - - - 500 TYP. - - - - - - MAX. 1.7 2.3 1 100 350 - BYD67 UNIT V V µA µA ns ns trr reverse recovery...