BYG70J Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - UL 94V-O classified plastic package - Shipped in 12 mm embossed tape. Top view Side view handbook, 4 columns BYG70 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYG70D BYG70G BYG70J VR continuous reverse voltage BYG70D BYG70G BYG70J IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.4 L = 120 m H; Tj = Tj max prior to surge; inductive load switched off - - - - - 200 400 600 1.00 0.53 V V V A A - - - 200 400 600 V V V CONDITIONS MIN. MAX. UNIT - 0.39 - 20 ERSM Tstg Tj - - 65 - 65 10 +175 +175 m J °C °C 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYG70D BYG70G BYG70J IR reverse current VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 °C; see Fig.6 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 VR = 0 V; f = 1 MHz CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 IR = 0.1 m A 300...