BYG90-40 Datasheet | NXP Semiconductors

FEATURES - Low switching losses - Capability of absorbing very high surge current - Fast recovery time - Guard ring protected - Plastic SMD package. APPLICATIONS - Low power switched-mode power supplies - Rectifying - Polarity protection. DESCRIPTION The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages. Top view cathode identifier handbook, 4 columns BYG90-40 series kk aa MAM129 - 1 Fig.1 Simplified outline (SOD106A), pin configuration and symbol. 1996 May 06 Philips Semiconductors Product specification Schottky barrier rectifier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR continuous reverse voltage BYG90-20 BYG90-30 BYG90-40 VRRM repetitive peak reverse voltage BYG90-20 BYG90-30 BYG90-40 VRWM crest working reverse voltage BYG90-20 BYG90-30 BYG90-40 IF(AV) average forward current Tamb = 65 °C; see Fig.2; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 µs half sine wave; JEDEC method tp = 100 µs - - - - - - - - - - PARAMETER CONDITIONS BYG90-40 series MIN. MAX. UNIT 20 30 40 20 30 40 20 30 40 1 V V V V V V V V V A IFSM IRSM Tstg Tj Notes non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature - - - 65 - 30 0.5 +125 125 A A °C °C 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May...