BYG90-90 Datasheet | NXP Semiconductors

FEATURES - Low switching losses - High breakdown voltage - Capability of absorbing very high surge current - Fast recovery time - Guard ring protected - Plastic SMD package. k a DESCRIPTION The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. cathode identifier handbook, 4 columns APPLICATIONS - Low power switched-mode power supplies - Rectifying - Polarity protection. Top view MAM129 - 1 Fig.1 Simplified outline (SOD106A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRRM VRWM IF(AV) PARAMETER continuous reverse voltage repetitive peak reverse voltage crest working reverse voltage average forward current Tamb = 100 °C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method tp = 100 µs - CONDITIONS MIN. MAX. 90 90 90 1 V V V A UNIT IFSM IRSM Tstg Tj Notes non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature - - - 65 - 30 0.5 +150 150 A A °C °C 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 13 Philips Semiconductors Product specification Schottky barrier rectifier diode ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2; note 1 IF = 0.06 A IF = 1 A IF = 1 A; Tj = 100 °C IR reverse current VR = VRRMmax; note 1; see Fig.3 VR = VRRMmax; Tj = 100 °C; note 1; see Fig.3 Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD106A standard mounting conditions. PARAMETER thermal...