NXP Semiconductors BYQ28E-200E
Dual ultrafast power diodes
| Part No. | BYQ28E-200E |
|---|---|
| Datasheet | BYQ28E-200E Download |
| Manufacturer |  NXP Semiconductors |
| Description | Dual ultrafast power diodes |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Fast switching● Guaranteed ESD capability
● High thermal cycling performance
● Low on-state losses
● Low thermal resistance
● Soft recovery minimizes power-consuming oscillations 1.3
APPLICATIONS
● Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Symbol VRRM IO(AV) Quick reference data Parameter repetitive peak reverse voltage average output current square-wave pulse; δ = 0.5 ; Tmb ≤ 119 °C; both diodes conducting; see Figure 1; see Figure 2 δ = 0.5 ; tp = 25 µs; Tmb ≤ 119 °C; per diode; square-wave pulse IF = 5 A; Tj = 150 °C; see Figure 4 IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 HBM; C = 250 pF; R = 1.5 kΩ; all pins Conditions Min Typ Max Unit 200 10 V A IFRM repetitive peak forward current - - 10 A Static characteristics VF forward voltage 0.8 0.89 V 5 25 ns Dynamic characteristics trr reverse recovery time 15 Electrostatic discharge VESD electrostatic discharge voltage 8 kV F r e e D a t a s h e e t NXP Semiconductors BYQ28E-200E Dual ultrafast power diodes 2.
