WeEn Semiconductors BYQ28E-200E
Dual ultrafast power diodes
FEATURES AND BENEFITS
● Fast switching● Low on-state losses
● Guaranteed ESD capability
● Low thermal resistance
● High thermal cycling performance
● Soft recovery minimizes power-consuming oscillations 3.
APPLICATIONS
● Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IO(AV) average output current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Symbol Parameter Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Electrostatic discharge VESD electrostatic discharge voltage Conditions square-wave pulse; δ = 0.5; Tmb ≤ 119 °C; both diodes conducting; Fig. 1; Fig. 2 δ = 0.5; tp = 25 μs; Tmb ≤ 119 °C; per diode; square-wave pulse tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode Conditions IF = 5 A; Tj = 150 °C; Fig.