BYQ30EB-100 Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYQ30EB series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr IRRM PARAMETER BYQ30EBRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode MAX. 100 100 0.95 16 25 0.2 MAX. 150 150 0.95 16 25 0.2 MAX. 200 200 0.95 16 25 0.2 UNIT V V A ns A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION no connection cathode anode cathode PIN CONFIGURATION mb SYMBOL k tab 2 1 3 a 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Tmb ≤ 104 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 16 23 16 100 110 50 0.2 0.2 150 150 -200 200 200 200 UNIT V V V A A A A A A2s A A ˚C ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses. October 1997 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD...