BYV118X-35 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Isolated package BYV118F, BYV118X series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF ≤ 0.6 V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118F series is supplied in the SOT186 package. The BYV118X series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118FBYV118XVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 97 ˚C square wave; δ = 0.5; Ths ≤ 107 ˚C square wave; δ = 0.5; Ths ≤ 107 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 35 35 35 35 35 MAX. 40 40 40 40 40 10 10 100 110 1 150 175 45 45 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg May 1998 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS BYV118F, BYV118X...