BYV32F-200 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Isolated mounting tab BYV32F, BYV32EX series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF ≤ 0.85 V IO(AV) = 12 A IRRM = 0.2 A trr ≤ 25 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32F series is supplied in the SOT186 package. The BYV32EX series is supplied in the SOT186A package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT186 case SOT186A case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Ths ≤ 95 ˚C t = 25 µs; δ = 0.5; Ths ≤ 95 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature CONDITIONS BYV32F / BYV32EX -40 MIN. -150 150 150 150 12 20 125 137 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ BYV32F, BYV32EX series MIN. - MAX. 8 UNIT k V ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three...