BYV40E-200 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged Features - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - low profile surface mounting package BYV40E series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k 2 a2 3 VF ≤ 0.7 V IO(AV) = 1.5 A IRRM = 0.1 A trr ≤ 25 ns GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV40E series is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode SOT223 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV40E Tsp ≤ 120˚C MIN. -150 150 150 150 1.5 1.5 6 6.6 MAX. -200 200 200 200 UNIT V V V A A A A IRRM IRSM Tstg Tj square wave; δ = 0.5; Tsp ≤ 132˚C t = 25 µs; δ = 0.5; Tsp ≤ 132 ˚C tp = 10 ms tp = 8.3 ms sinusoidal; Tj = 150˚C prior to surge; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature -65 - 0.1 0.1 150 150 A A ˚C ˚C 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING...