BYV410-600
BYV410-600 is Enhanced Ultrafast Dual Rectifier Diode manufactured by NXP Semiconductors.
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Enhanced ultrafast dual rectifier diode
Rev. 01
- 29 June 2009 Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
- High thermal cycling performance
- Low on state losses
- Low thermal resistance
- Soft recovery characteristic minimizes power consuming oscillations
1.3 Applications
- Dual mode (DCM and CCM) PFC
- Power Factor Correction (PFC) for Interleaved Topology
1.4 Quick reference data
Table 1. VRRM IO(AV) Quick reference Conditions Min square-wave pulse; δ = 0.5; Tmb ≤ 92 °C; both diodes conducting; see Figure 1; see Figure 2 IF = 1 A; VR = 30 V; d IF/dt = 100 A/µs; Tj = 25 °C; see Figure 5 IF = 1 A; VR = 30 V; d IF/dt = 100 A/µs IF = 10 A; Tj = 150 °C IF = 10 A; Tj = 25 °C; see Figure 4 Typ Max 600 20 Unit V A repetitive peak reverse voltage average output current Symbol Parameter
Dynamic characteristics trr reverse recovery time recovered charge 20 35 ns
Qr
- 15
Static characteristics VF forward voltage 1.3 1.4 1.9 2.1 V V
NXP Semiconductors
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Enhanced ultrafast dual rectifier diode
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol A1 K A2 K Description anode 1 cathode anode 2 mounting base; cathode mb
A1 K sym125
Simplified outline
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